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2SD1326 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD1326 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington For midium speed power switching s Features q Incorporating a zener diode of 60V zener voltage between col- lector and base q Minimized variation in the breakdown voltage q Large energy handling capability q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 ±10 60 ±10 5 8 4 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Energy handling capability Symbol ICBO IEBO VCEO hFE1 hFE2 *1 VCE(sat) VBE(sat) fT ton tstg tf Es/b *2 Conditions VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 5mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA IC = 3A, IB = 12mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V IC = 2A, L = 100mH, RBE = 100Ω min 50 1000 2000 50 typ 20 0.3 3 1 max 100 2 70 10000 2.5 4 2.5 Unit µA mA V V V MHz µs µs µs mJ *1h FE2 Rank classification Rank Q P hFE2 2000 to 5000 4000 to 10000 TC=25°C Ta=25 °C *2E s/b Test circuit Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 B E C X L 1 Ω Y G 6V 120 Ω R BE 60Hz mercury relay |
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