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ISCE18121 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. ISCE18121
Description  isc Silicon PNP Power Transistor
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
ISCE18121
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
-0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
-2.0
V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
-1.0
μ
A
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
-1.0
μ
A
hFE-1
DC Current Gain
IC= -20mA ; VCE= -2V
30
hFE-2
DC Current Gain
IC= -1A ; VCE= -2V
60
400
fT
Current-Gain—Bandwidth Product
IC= -0.1A ; VCE= -5V
80
MHz
COB
Output Capacitance
IE=0; VCB= -10V, ftest= 1MHz
55
pF
hFE-2 Classifications
R
Q
P
E
60-120
100-200
160-320
200-400




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