SI8415DB datasheet(1/6 Pages) VISHAY

Part #	SI8415DB

Description	P-Channel 12-V (D-S) MOSFET

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 6 page

FEATURES

D TrenchFETr Power MOSFET

D New MICRO FOOTr Chipscale Packaging

Reduces Footprint Area Profile (0.62 mm) and

On-Resistance Per Footprint Area

D Ultra-Low On-Resistance

APPLICATIONS

D Load Switch, Charger Switch, and PA Switch for

Portable Devices

Si8415DB

Vishay Siliconix

New Product

Document Number: 73210

S-50037—Rev. A, 17-Jan-05

www.vishay.com

1

P-Channel 12-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

Qg (Typ)

0.037 @ VGS = −4.5 V

−7.3

−12

0.046 @ VGS = −2.5 V

−6.6

19

0.060 @ VGS = −1.8 V

−5.8

MICRO FOOT

32

41

S

DD

G

Bump Side View

Backside View

Device Marking: 8415

xxx = Date/Lot Traceability Code

8415

xxx

Ordering Information: Si8415DB-T1—E1

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

−12

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−7.3

−5.3

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

−5.9

−4.3

A

Pulsed Drain Current

IDM

−25

A

Continuous Source Current (Diode Conduction)a

IS

−2.5

−1.3

Maximum Power Dissipationa

TA = 25_C

PD

2.77

1.47

W

Maximum Power Dissipationa

TA = 70_C

PD

1.77

0.94

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

Package Reflow Conditionsb

VPR

215

_C

Package Reflow Conditionsb

IR/Convection

220

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 5 sec

R

35

45

Maximum Junction-to-Ambienta

Steady State

RthJA

72

85

_C/W

Maximum Junction-to-Foot (drain)

Steady State

RthJF

16

20

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

Similar Part No. - SI8415DB

Manufacturer	Part #	Datasheet	Description
Silicon Laboratories	SI8410	571Kb / 26P	SINGLE & DUAL-CHANNEL DIGITAL ISOLATORS
List of Unclassifed Man...	SI8410	421Kb / 37P	LOW-POWER, SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS
Silicon Laboratories	SI8410	421Kb / 37P	LOW-POWER, SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS
Skyworks Solutions Inc.	SI8410	1,001Kb / 30P	LOW-POWER SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS Revision 1.4 to Revision 1.5
Silicon Laboratories	SI8410-A-IS	571Kb / 26P	SINGLE & DUAL-CHANNEL DIGITAL ISOLATORS

More results

Similar Description - SI8415DB

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI2335DS	48Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. A, 23-Oct-00
	SI6423DQ	42Kb / 5P	P-Channel 12-V (D-S) MOSFET Rev. A, 07-Jul-03
	SIA477EDJT	264Kb / 8P	P-Channel 12 V (D-S) MOSFET Rev. A, 29-Aug-16
	SI2333CDS-T1-GE3	225Kb / 9P	P-Channel 12-V (D-S) MOSFET Rev. C, 16-Nov-0
	SI3477DV	226Kb / 11P	P-Channel 12 V (D-S) MOSFET Rev. A, 19-Jul-10
	SI2333DS	243Kb / 3P	P-Channel 12-V (D-S) MOSFET Rev. B, 21-Mar-05
	SI2333DS-T1	195Kb / 9P	P-Channel 12-V (D-S) MOSFET Rev. C, 02-Feb-09
	SI2333CDS	104Kb / 6P	P-Channel 12-V (D-S) MOSFET Rev. A, 23-Jun-08
	SI5475DC	109Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. B, 05-Aug-02
VBsemi Electronics Co.,...	MMSF4P01HDR2G	878Kb / 6P	P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI2333DS	199Kb / 9P	P-Channel 12-V (D-S) MOSFET Rev. C, 02-Feb-09

More results

SI8415DB Datasheet(PDF) 1 Page - Vishay Siliconix

SI8415DB Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SI8415DB

Similar Description - SI8415DB

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL