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2SC5695 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5695 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC5695 2001-10-29 1 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV · High voltage: VCBO = 1500 V · Low saturation voltage: VCE (sat) = 3 V (max) · High speed: tf (2) = 0.1 µs (typ.) Maximum Ratings (Tc ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 22 Collector current Pulse ICP 44 A Base current IB 11 A Collector power dissipation PC 200 W Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Tc ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 1500 V, IE = 0 ¾ ¾ 1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 10 mA Collector-emitter breakdown voltage V(BR) CEO IC = 10 mA, IB = 0 700 ¾ ¾ V hFE (1) VCE = 5 V, IC = 2 A 20 ¾ 50 hFE (2) VCE = 5 V, IC = 10 A 8 ¾ 17 DC current gain hFE (3) VCE = 5 V, IC = 17 A 4.8 ¾ 8.3 ¾ Collector-emitter saturation voltage VCE (sat) IC = 17 A, IB = 4.25 A ¾ ¾ 3 V Base-emitter saturation voltage VBE (sat) IC = 17 A, IB = 4.25 A ¾ 1.0 1.5 V Transition frequency fT VCE = 10 V, IC = 0.1 A ¾ 2 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 280 ¾ pF Storage time tstg (1) ¾ 2.5 3 Fall time tf (1) ICP = 8 A, IB1 (end) = 1.4 A, fH = 64 kHz ¾ 0.15 0.3 Storage time tstg (2) 1.6 1.8 Switching time Fall time tf (2) ICP = 8 A, IB1 (end) = 1.1 A, fH = 100 kHz ¾ 0.1 0.15 ms Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2A Weight: 9.75 g (typ.) |
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