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MSK3014 Datasheet(PDF) 2 Page - M.S. Kennedy Corporation

Part # MSK3014
Description  H-BRIDGE MOSFET POWER MODULE
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Manufacturer  MSK [M.S. Kennedy Corporation]
Direct Link  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

MSK3014 Datasheet(HTML) 2 Page - M.S. Kennedy Corporation

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VGS=0 ID=0.25mA (All Transistors)
VDS=100V VGS=0V (Q2,Q3)
VDS=-100V VGS=0V (Q1,Q4)
VGS=±20V VDS=0 (All Transistors)
VDS=VGS ID=250µA (Q2,Q3)
VDS=VGS ID=250µA (Q1,Q4)
VGS=10V ID=9.0A (Q2,Q3)
VGS=-10V ID=-8.4A (Q1,Q4)
VGS=10V ID=9.0A (Q2,Q3)
VGS=10V ID=-8.4A (Q1,Q4)
VDS=50V ID=9.0A (Q2,Q3)
VDS=-50V ID=-8.4A (Q1,Q4)
ID=9.0A
VDS=80V
VGS=10V
VDD=50V
ID=9.0A
RG=12Ω
RD=5.5Ω
VGS=0V
VDS=25V
f=1.0MHz
ID=-8.4A
VDS=-80V
VGS=-10V
VDD=-50V
ID=-8.4A
RG=9.1Ω
RD=6.2Ω
VGS=0V
VDS=-25V
f=1.0MHz
IS=9.0A VGS=0V (Q2,Q3)
IS=-8.4A VGS=0V (Q1,Q4)
IS=9.0A di/dt=100A/µS (Q2,Q3)
IS=-8.4A di/dt=100A/µS (Q1,Q4)
IS=9.0A di/dt=100A/µS (Q2,Q3)
IS=-8.4A di/dt=100A/µS (Q1,Q4)
ABSOLUTE MAXIMUM RATINGS
1
2
3
4
Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q2,Q3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
7.9mJ
7.9mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
300°C MAX
Single Pulse Avalanche Energy
(Q2,Q4,Q6)
(Q1,Q3,Q5)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds)
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
TJ
TST
TC
TLD
100V MAX
100V MAX
±20V MAX
10A MAX
25A MAX
7.9°C/W
Parameter
Units
MSK3014
Test Conditions
V
µA
µA
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
µC
µC
Min.
100
-
-
-
2.0
2.0
-
-
-
-
6.4
3.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.4
27
37
25
640
160
88
-
-
-
15
58
45
46
760
260
170
1.3
-1.6
130
130
650
650
Max.
-
25
-25
±100
4.0
4.0
0.20
0.28
0.11
0.20
-
-
44
6.2
21
-
-
-
-
-
-
-
58
8.3
32
-
-
-
-
-
-
-
-
-
190
190
970
970
ELECTRICAL SPECIFICATIONS
2
1
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
4
Rev. B 7/00
2


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