NXP Semiconductors

BGU8051

Low noise high linearity amplifier

BGU8051

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Product data sheet

Rev. 7 — 8 June 2017

COMPANY PUBLIC

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4 Quick reference data

Table 1. Quick reference data

are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 900 MHz.

Symbol Parameter

Conditions

Min Typ Max Unit

on state

36

48

60 mA

supply current

off state

-

2.8

-

mA

on state

17

18.3

20 dB

associated gain

off state

-

-21

-

dB

NF

noise figure

-

0.43 0.63 dB

output power at 1 dB gain compression

-

19

-

dBm

output third-order intercept point

-15 dBm per tone

35

39

-

dBm

5 Ordering information

Table 2. Ordering information

Package

Type number

Name

Description

Version

BGU8051

HWSON8

plastic thermal enhanced very very thin small outline package; no

leads; 8 terminals; body 2 × 2 × 0.75 mm

SOT1327-1

6 Block diagram

aaa-021372

n.c.

i.c.

n.c.

SHDN

i.c.

BIAS

Figure 1. Block diagram