IS75V16F128GS32 datasheet(6/52 Pages) ISSI

Part #	IS75V16F128GS32

Description	3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

PRELIMINARY INFORMATION

Rev. 00D

03/24/03

IS75V16F128GS32

ISSI®

DC CHARACTERISTICS

Symbol Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ILI

Input Leakage

VIN=GND to VCCf, VCCr

-1.0

—

+1.0

µA

ILO

Output Leakage

VOUT=GND to VCCf, VCCr

-1.0

—

+1.0

µA

ILIT

RESET Inputs

VCCf=VCCf max.,

—

35

µA

Leakage Current

RESET = 12.5V

ICC1f

FLASH Vcc (1)

CEf=VIL, OE=VIH

tCycle = 5Mhz

—

18

mA

Active Current (Read)

tCycle = 1Mhz

—

4

mA

ICC2f

FLASH Vcc Active(2)

CEf=VIL,—

—

35

mA

Current(Program/Erase)

OE=VIH

ICC3f

FLASH Vcc Active(5)

CEf=VIL,—

—

53

mA

Current

OE=VIH

(Read-While-Program)

ICC4f

FLASH Vcc Active(5)

CEf=VIL,—

—

53

mA

Current

OE=VIH

(Read-While-Erase)

ICC5f

FLASH Vcc Active

CEf=VIL,—

—

40

mA

Current

OE=VIH

(Erase-Suspend-Program)

IACC

WP/ACC Acceleration

VCCf = Vcc max,

—

20

mA

Program Current

WP/ACC = VACC max

ICC1r

PSRAM Vcc Active

VCCr = Vccr max,

trc / twc = min

—

25

mA

Current

CE1r=VIL, CE2r=VIH,

VIN=VIH or VIL,

trc / twc = 1 µs

—

3

mA

IOUT=0 mA

ISB1f

FLASH Vcc

VCCf = Vccf max,

CEf= VCCf + 0.3V,

—

1

5

µA

Standby Current(7)

RESET = VCCf + 0.3V,

WP/ACC = VCCf + 0.3V

ISB2f

FLASH Vcc

(7)

VCCf = Vccf max,

RESET= GND + 0.3V,

—

1

5

µA

Standby Current

WP/ACC = VCCf + 0.3V

(

RESET)

ISB3f

FLASH Vcc (3,7)

VCCf = Vccf max,

CEf = GND + 0.3V,

—

1

5

µA

Current

RESET = VCCf + 0.3V,

(Automatic Sleep Mode)

WP/ACC = VCCf + 0.3V,

VIN

= VCCf + 0.3V OR GND + 0.3V

ISB1r

PSRAM Vcc Standby(8)

VCCr = Vccr max,

CE1r

≥ VCCr -0.2V,

—

110

µA

Current

CE2r

≥ VCCr -0.2V,

VIN

≤ 0.2 V or VIN ≥ VCCr -0.2V

IPDSr

PSRAM VCC Power

VCCr = VCCr max.,

—

10

µA

Down Current

CE1r

≥ VCCr - 0.2 V

(Sleep Mode)

CE2r

≤ 0.2 V, VIN Cycle time = tRC min

IPDNr

PSRAM VCC Power (8)

VCCr = VCCr max.,

—

65

µA

Down Current

CE1r

≥ VCCr - 0.2 V

(Nap Mode)

CE2r

≤ 0.2 V, VIN Cycle time = tRC min

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