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WS512K32NBV-17G2CE Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 8 page 1 White Microelectronics • Phoenix, AZ • (602) 437-1520 4 WS512K32BV-XXXE 512Kx32 3.3V SRAM MODULE PRELIMINARY* s Commercial, Industrial and Military Temperature Ranges s 3.3 Volt Power Supply s BiCMOS s TTL Compatible Inputs and Outputs s Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation s Weight WS512K32BV-XG2XE - 8 grams typical WS512K32NBV-XH2XE - 13 grams typical * This data sheet describes a product under development, not fully characterized, and is subject to change without notice. † This speed is Advanced information. FEATURES s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Available s Low Voltage Operation s Packaging • 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402) • 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint s Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8 s Radiation Tolerant with Epitaxial Layer Die PIN CONFIGURATION FOR WS512K32NBV-XH2XE PIN DESCRIPTION I/O0-31 Data Inputs/Outputs A0-18 Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected I/O8 I/O9 I/O10 A13 A14 A15 A16 A17 I/O0 I/O1 I/O2 WE2 CS2 GND I/O11 A10 A11 A12 VCC CS1 NC I/O3 I/O15 I/O14 I/O13 I/O12 OE A18 WE1 I/O7 I/O6 I/O5 I/O4 I/O24 I/O25 I/O26 A6 A7 NC A8 A9 I/O16 I/O17 I/O18 VCC CS4 WE4 I/O27 A3 A4 A5 WE3 CS3 GND I/O19 I/O31 I/O30 I/O29 I/O28 A0 A1 A2 I/O23 I/O22 I/O21 I/O20 11 22 33 44 55 66 1 12 23 34 45 56 TOP VIEW BLOCK DIAGRAM 512K x 8 8 I/O 0-7 CS1 512K x 8 8 I/O 8-15 2 512K x 8 8 I/O 16-23 3 512K x 8 8 I/O 24-31 4 A 0-18 OE WE CS WE CS WE CS WE 12 3 4 February 1998 |
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