2 Electrical characteristics

STB12NK80Z - STP12NK80Z - STW12NK80Z

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Table 7.

Source drain diode

Table 8.

Gate-source zener diode

(2) Pulse width limited by safe operating area

(3) Limited only by maximum temperature allowed

(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%

(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but

also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this

respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

10.5

42

A

A

Forward on Voltage

1.6

V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

635

5.9

18.5

ns

µC

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Note 6

Gate-Source

Breakdown Voltage

Igs=±1mA

(Open Drain)

30

V