Philips Semiconductors

PMF370XN

N-channel

µTrenchMOS™ extremely low level FET

Product data

Rev. 01 — 11 February 2004

6 of 12

9397 750 12766

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ao00

0

0.5

1

1.5

2

2.5

0

0.5

1

1.5

2

VDS (V)

ID

(A)

4.5 V

3 V

2.5 V

2 V

VGS = 1.8 V

3.5 V

03ao02

0

0.5

1

1.5

2

2.5

01

23

45

VGS (V)

ID

(A)

VDS > ID x RDSon

Tj = 150 °C

25

°C

03ao01

0

0.2

0.4

0.6

0.8

1

00.5

11.5

22.5

ID (A)

RDSon

(

Ω)

4.5 V

3 V

3.5 V

VGS = 2.5 V

03al00

0

0.6

1.2

1.8

-60

0

60

120

180

Tj (°C)

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=