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NM93C06LZMT8 Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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NM93C06LZMT8 Datasheet(HTML) 1 Page - National Semiconductor (TI) |
1 / 12 page TLD11778 September 1996 NM93C06LZC46LZC56LZC66LZ 256-1024-2048-4096-Bit Serial EEPROM with Zero Power and Extended Voltage (27V to 55V) (MICROWIRE TM Bus Interface) General Description The NM93C06LZC46LZC56LZC66LZ devices are 256 102420484096 bits respectively of CMOS non-volatile electrically erasable memory divided into 1664128256 16-bit registers They are fabricated using National Semi- conductor’s floating-gate CMOS process for high reliability and low power consumption These memory devices are available in both SO and TSSOP packages for small space considerations The serial interface that operates these EEPROMs is MI- CROWIRE compatible for simple interface to standard mi- crocontrollers and microprocessors There are 7 instruc- tions that control these devices Read EraseWrite Enable Erase Erase All Write Write All and EraseWrite Disable The readybusy status is available on the DO pin to indicate the completion of a programming cycle Features Y Less than 10 mA standby current Y 27V – 55V operation in all modes Y Typical active current of 100 mA Y Direct write no erase before program Y Reliable CMOS floating gate technology Y MICROWIRE compatible serial IO Y Self-timed programming cycle Y Device status indication during programming mode Y 40 years data retention Y Endurance 106 data changes Y Packages available 8-pin SO 8-pin DIP 8-pin TSSOP Block Diagram TLD11778 – 1 TRI-STATE is a registered trademark of National Semiconductor Corporation MICROWIRETM is a trademark of National Semiconductor Corporation C1996 National Semiconductor Corporation RRD-B30M96Printed in U S A http www nationalcom |
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