©2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

March 2005

RMPA1765 Rev. D

RMPA1765

K-PCS, CDMA, CDMA2000-1X and WCDMA

Power Edge™ Power Amplifier Module

Features

■ Single positive-supply operation and low power and

shutdown modes

■ 38% CDMA/WCDMA efficiency at +28 dBm average output

power

■ Compact lead-free compliant LCC package-

3.0 x 3.0 x 1.0 mm with industry standard pinout

■ Internally matched to 50 Ohms and DC blocked RF

input/output.

■ Meets CDMA2000-1XRTT/WCDMA performance require-

ments

General Description

The RMPA1765 power amplifier module (PAM) is designed for

Korean CDMA, CDMA2000-1X and WCDMA personal commu-

nications system (PCS) applications. The 2 stage PAM is inter-

nally matched to 50 Ohms to minimize the use of external

components and features a low-power mode to reduce standby

current and DC power consumption during peak phone usage.

High

power-added

efficiency

and

excellent

linearity

are

achieved using Fairchild RF’s InGaP Heterojunction Bipolar

Transistor (HBT) process.

Device

Functional Block Diagram

(Top View)

PA MODULE

(paddle ground on package bottom)

4

3

2

1

8

7

6

5

DC Bias Control

Input

Match

Output

Match

Vcc2

RF OUT

GND

Vref

RF IN

Vcc1

MMIC

Vmode

GND