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IXFN-26N90 Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXFN-26N90
Description  HiPerFETTM Power MOSFETs Single Die MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN-26N90 Datasheet(HTML) 4 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
IXFN 25N90
IXFN 26N90
Figure 9. Forward Voltage Drop of the Intrinsic Diode
V
SD - Volts
0.0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
35
40
45
50
Case Temperatue -
oC
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Pulse Width - Seconds
10-4
10-3
10-2
10-1
100
101
0.001
0.010
0.100
V
DS - Volts
0
5
10
15
20
25
30
35
40
100
1000
10000
Gate Charge - nC
0
50
100
150
200
250
300
350
0
3
6
9
12
15
Crss
Coss
Ciss
VDS = 500 V
ID = 13 A
IG = 10 mA
f = 1MHz
IXFN26N90
TJ = 125oC
TJ = 25oC
0. 300
IXFN25N90
20000
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure10. Drain Current vs. Case Temperature
Capacitance Curves
Figure 11. Transient Thermal Resistance


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