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KFH1G16U2M-DIB Datasheet(PDF) 10 Page - Samsung semiconductor |
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KFH1G16U2M-DIB Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 93 page OneNAND512/OneNAND1GDDP FLASH MEMORY 10 DEFINITIONS B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction Code Calculated ECC ECC which has been calculated during load or program access Written ECC ECC which has been stored as data in the NAND Flash Array or in the BufferRAM BufferRAM On-chip Internal Buffer consisting of BootRAM and DataRAM BootRAM A 1KB portion of the BufferRAM reserved for Bootcode buffering DataRAM A 4KB portion of the BufferRAM reserved for Data buffering Memory NAND Flash array which is embedded on OneNAND Sector Partial unit of page, of which size is 512B for main area and 16B for spare area data. It is the minimum Load/Program/Copy-Back program unit while one~four sector opera- tion is available Data unit Possible data unit to be read from memory to BufferRAM or to be programmed to mem- ory. - 528B of which 512B is in main area and 16B in spare area - 1056B of which 1024B is in main area and 32B in spare area - 1584B of which 1536B is in main area and 48B in spare area - 2112B of which 2048B is in main area and 64B in spare area |
Similar Part No. - KFH1G16U2M-DIB |
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Similar Description - KFH1G16U2M-DIB |
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