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Rev. 1.4 Aug. 2005

DDR2 SDRAM

512Mb C-die DDR2 SDRAM

2.2 Input/Output Functional Description

Symbol

Type

Function

CK, CK

Input

Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of

CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both directions of crossing).

CKE

Input

Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Tak-

ing CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (row Active in any

bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self refresh exit. After

and write accesses. Input buffers, excluding CK, CK, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are

disabled during self refresh.

CS

Input

Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on systems with multiple

Ranks. CS is considered part of the command code.

ODT

Input

On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is only

applied to each DQ, DQS, DQS, RDQS, RDQS, and DM signal for x4/x8 configurations. For x16 configuration ODT is applied to each

DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will be ignored if the Extended Mode Register (EMRS(1)) is pro-

grammed to disable ODT.

RAS, CAS, WE

Input

Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.

DM

Input

Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input

data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ

and DQS loading. For x8 device, the function of DM or RDQS/RDQS is enabled by EMRS command.

BA0 - BA1

Input

Bank Address Inputs: BA0 - BA1 define to which bank an Active, Read, Write or Precharge command is being applied (For 256Mb and

512Mb, BA2 is not applied). Bank address also determines if the mode register or extended mode register is to be accessed during a

MRS or EMRS cycle.

A0 - A13

Input

Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit for Read/Write com-

mands to select one location out of the memory array in the respective bank. A10 is sampled during a Precharge command to determine

whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is

selected by BA0, BA1. The address inputs also provide the op-code during Mode Register Set commands.

DQ

Input/Output Data Input/ Output: Bi-directional data bus.

DQS, (DQS)

(LDQS), (LDQS)

(UDQS), (UDQS)

(RDQS), (RDQS)

Input/Output

Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. For the x16, LDQS corre-

sponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. For the x8, an RDQS option using DM pin can be

enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS, and RDQS may be used in single ended mode

or paired with optional complementary signals DQS, LDQS, UDQS, and RDQS to provide differential pair signaling to the system during

both reads and writes. An EMRS(1) control bit enables or disables all complementary data strobe signals.

In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)

x4 DQS/DQS

x8 DQS/DQS

if EMRS(1)[A11] = 0

x8 DQS/DQS, RDQS/RDQS,

if EMRS(1)[A11] = 1

x16 LDQS/LDQS and UDQS/UDQS

"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)

x4 DQS

x8 DQS if EMRS(1)[A11] = 0

x8 DQS, RDQS, if EMRS(1)[A11] = 1

x16 LDQS and UDQS

NC

No Connect: No internal electrical connection is present.

Supply

Power Supply: 1.8V +/- 0.1V, DQ Power Supply: 1.8V +/- 0.1V

Supply

Ground, DQ Ground

Supply

DLL Power Supply: 1.8V +/- 0.1V

Supply

DLL Ground

Supply

Reference voltage