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K4D551638D-TC50 Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K4D551638D-TC50
Description  256Mbit GDDR SDRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4D551638D-TC50 Datasheet(HTML) 8 Page - Samsung semiconductor

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256M GDDR SDRAM
K4D551638D-TC
- 8 -
Rev 1.8 (Oct. 2003)
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency,
addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for
variety of different applications. The default value of the mode register is not defined, therefore the mode register must be
written after EMRS setting for proper operation. The mode register is written by asserting low on CS, RAS, CAS and
WE(The DDR SDRAM should be in active mode with CKE already high prior to writing into the mode register). The state of
address pins A0 ~ A12 and BA0, BA1 in the same cycle as CS, RAS, CAS and WE going low is written in the mode register.
Minimum two clock cycles are requested to complete the write operation in the mode register. The mode register contents
can be changed using the same command and clock cycle requirements during operation as long as all banks are in the
idle state. The mode register is divided into various fields depending on functionality. The burst length uses A0 ~ A2,
addressing mode uses A3, CAS latency(read latency from column address) uses A4 ~ A6. A7 is used for test mode. A8 is
used for DLL reset. A7,A8, BA0 and BA1 must be set to low for normal MRS operation. Refer to the table for specific codes
for various burst length, addressing modes and CAS latencies.
MODE REGISTER SET(MRS)
Mode Register
CAS Latency
A6
A5
A4
Latency
000
Reserved
001
Reserved
010
Reserved
011
3
100
4
101
Reserved
110
Reserved
111
Reserved
Burst Length
A2
A1
A0
Burst Type
Sequential
Interleave
0
0
0
Reserve
Reserve
00
1
2
2
01
0
4
4
01
1
8
8
1
0
0
Reserve
Reserve
1
0
1
Reserve
Reserve
1
1
0
Reserve
Reserve
1
1
1
Reserve
Reserve
Burst Type
A3
Type
0
Sequential
1
Interleave
* RFU(Reserved for future use)
should stay "0" during MRS
cycle.
MRS Cycle
Command
*1 : MRS can be issued only at all banks precharge state.
*2 : Minimum
tRP is required to issue MRS command.
0
CK, CK
Precharge
NOP
NOP
MRS
NOP
NOP
2
01
5
34
8
67
Any
NOP
All Banks
Command
tRP
tMRD=2 tCK
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
An ~ A0
0MRS
1EMRS
DLL
A8
DLL Reset
0No
1Yes
Test Mode
A7
mode
0
Normal
1Test
NOP
Address Bus
RFU
0
RFU
DLL
TM
CAS Latency
BT
Burst Length


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