6.42

IDT70T3339/19/99S

PRELIMINARY

High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

9

Symbol

Rating

Commercial

& Industrial

Unit

with Respect to GND

-0.5 to 3.6

V

with Respect to GND

V

(INPUTS and I/O's)

Input and I/O Terminal

Voltage with Respect to GND

V

Temperature Under Bias

-55 to +125

Storage Temperature

-65 to +150

Junction Temperature

+150

50

mA

40

mA

5652 tbl 06

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

2. This is a steady-state DC parameter that applies after the power supply has reached its

nominal operating value. Power sequencing is not necessary; however, the voltage on

3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.

DC Electrical Characteristics Over the Operating

Symbol

Parameter

Test Conditions

70T3339/19/99S

Unit

Min.

Max.

___

10

µ A

___

±30

µ A

Output Leakage Current

(1,3)

___

10

µ A

Output Low Voltage

(1)

___

0.4

V

Output High Voltage

(1)

2.4

___

V

Output Low Voltage

(1)

___

0.4

V

Output High Voltage

(1)

2.0

___

V

5652 tbl 08

NOTES:

2. Applicable only for TMS, TDI and

TRST inputs.

3. Outputs tested in tri-state mode.

Symbol

Parameter

Max.

Unit

Input Capacitance

8

pF

Output Capacitance

10.5

pF

5652 tbl 07

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.