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K7Q163652A Datasheet(PDF) 10 Page - Samsung semiconductor |
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K7Q163652A Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 17 page 512Kx36 & 1Mx18 QDRTM b2 SRAM - 10 - Rev 1.0 July 2002 K7Q163652A K7Q161852A AC TIMING CHARACTERISTICS(VDD=2.5V ±0.1V, TA=0°C to +70°C) Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges. 2. Control signals are R, W,BW0,BW1 and (BW2, BW3, also for x36) 3. If C,C are tied high, K,K become the references for C,C timing parameters. 4. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention beacuse tCHQX1 is a MIN parameter that is worst case at totally different test conditions (0 °C, 2.6V) than tCHQZ, which is a MAX parameter(worst case at 70°C, 2.4V) It is not possible for two SRAMs on the same board to be at such different voltage and temperature. PARAMETER SYMBOL -16 -13 -10 UNITS NOTES MIN MAX MIN MAX MIN MAX Clock Clock Cycle Time(K, K, C, C) tKHKH 6 7.5 10 ns Clock HIGH time (K, K, C, C) tKHKL 2.4 3.0 3.5 ns Clock Low time (K, K, C, C) tKLKH 2.4 3.0 3.5 ns Clock to clock (K ↑ → K↑, C↑ → C↑) tKHKH 2.7 3.3 3.4 4.1 4.6 5.4 ns Clock to data clock (K ↑ → C↑, K↑→ C↑) tKHCH 0.0 2.0 0.0 2.5 0.0 3.0 ns Output Times C, C High to Output Valid tCHQV 2.5 3.0 3.0 ns 3 C, C High to Output Hold tCHQX 1.2 1.2 1.2 ns 3 C High to Output High-Z tCHQZ 2.5 3.0 3.0 ns 3 C High to Output Low-Z tCHQX1 1.2 1.2 1.2 ns 3 Setup Times Address valid to K rising edge tAVKH 0.7 0.8 1.0 ns Control inputs valid to K rising edge tIVKH 0.7 0.8 1.0 ns 2 Data-in valid to K, K rising edge tDVKH 0.7 0.8 1.0 ns Hold Times K rising edge to address hold tKHAX 0.7 0.8 1.0 v K rising edge to control inputs hold tKHIX 0.7 0.8 1.0 ns K, K rising edge to data-in hold tKHDX 0.7 0.8 1.0 ns OPERATING CONDITIONS (0 °C ≤ TA ≤ 70°C) PARAMETER SYMBOL MIN MAX UNIT Supply Voltage VDD 2.4 2.6 V VDDQ 1.4 1.9 V Reference Voltage VREF 0.68 0.95 V Ground VSS 0 0 V Note: For power-up, VIH ≤ VDDQ+0.3V and VDD ≤ 2.4V and VDDQ ≤ 1.4V for t ≤ 200ms VDDQ VIL VDDQ+0.7V 20% tKHKH(MIN) VSS VIH VSS-0.7V 20% tKHKH(MIN) Undershoot Timing Overershoot Timing |
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