IXFT26N60Q datasheet(1/2 Pages) IXYS

Part #	IXFT26N60Q

Description	HiPerFETTM Power MOSFETs Q-Class

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

600

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

600

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C26

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

104

A

I

AR

T

C

= 25

°C26

A

E

AR

T

C

= 25

°C45

mJ

E

AS

T

C

= 25

°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

360

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

TO-247

1.13/10 Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

HiPerFETTM

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q

g

Features

l Low gate charge

l International standard packages

l Epoxy meet UL 94 V-0, flammability

classification

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Avalanche energy and current rated

l Fast intrinsic Rectifier

Advantages

l Easy to mount

l Space savings

l High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 250µA

600

V

GS(th)

V

DS

= V

GS, ID = 4 mA

2.5

4.5

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±200

nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C25

µA

V

GS

= 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5

I

D25

0.25

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

G = Gate

D = Drain

S = Source

TAB = Drain

98635D (6/02)

TO-247 AD (IXFH)

(TAB)

TO-268 (D3) ( IXFT)

(TAB)

G

S

IXFH 26N60Q

IXFT 26N60Q

V

DSS

=

600 V

I

D25

=

26 A

R

DS(on)

= 0.25

Ω

t

rr ≤

≤≤≤≤ 250 ns

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