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BC63916 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BC63916
Description  Switching and Amplifier Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
• PW=5ms, Duty Cycle=10%
Electrical Characteristics T
a=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCER
Collector-Emitter Voltage at RBE=1KΩ
100
V
VCES
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
100
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
80
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5.0
V
ICBO
Collector Cut-off Current
VCB = 30V, IE = 0
100
nA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
hFE3
DC Current Gain
VCE = 2V, IC = 5mA
VCE = 2V, IC = 150mA
VCE = 2V, IC = 500mA
25
100
25
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
0.5
V
VBE(on)
Base-Emitter On Voltage
VCE = 2V, IC = 500mA
1
V
fT
Current Gain Bandwidth Product
VCE = 5V, IC=10mA,
f = 50MHz
100
MHz
BC63916
Switching and Amplifier Applications
1. Emitter 2. Collector 3. Base
TO-92
1




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