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BAP51L Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAP51L Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 9397 750 14554 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 March 2005 2 of 8 Philips Semiconductors BAP51L Silicon PIN diode 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics Table 3: Marking Type number Marking code BAP51L E2 Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 60 V IF forward current - 100 mA Ptot total power dissipation Tsp =90 °C - 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Table 5: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point 100 K/W Table 6: Electrical characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR = 50 V - - 100 nA Cd diode capacitance f = 1 MHz; see Figure 2 VR = 0 V - 0.30 - pF VR = 1 V - 0.23 0.4 pF VR = 5 V - 0.17 0.3 pF rD diode forward resistance f = 100 MHz; see Figure 1 IF = 0.5 mA - 5.3 9 Ω IF = 1 mA - 3.5 6.5 Ω IF = 10 mA - 1.4 2.5 Ω IF = 100 mA - 0.9 1.5 Ω s212 isolation VR = 0 V; see Figure 4 f = 900 MHz - 19 - dB f = 1800 MHz - 15 - dB f = 2450 MHz - 13 - dB |
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