AS4LC1M16E5-60TC datasheet(4/22 Pages) ETC

Part #	AS4LC1M16E5-60TC

Description	3V 1M X 6 CMOS DRAM (EDO)

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4 / 22 page

®

AS4LC1M16E5

4/11/01

Alliance Semiconductor

4

DC electrical characteristics

Shaded areas indicate advance information.

Parameter

Symbol

Test conditions

-50

-60

Unit

Notes

Min

Max

Min

Max

Input leakage current

IIL

0V

≤ V

in ≤ VCC (max)

Pins not under test = 0V

-2

+2

-2

+2

µ

A

Output leakage current

IOL

DOUT disabled, 0V ≤ Vout ≤ VCC (max)

-2

+2

-2

+2

µ

A

Operating power

supply current

ICC1

RAS, UCAS, LCAS, Address cycling;

tRC=min

–

140

–

130

mA

4,5

TTL standby power

supply current

ICC2

RAS = UCAS = LCAS

≥ V

IH,

all other inputs at VIH or VIL

–

2.0

–

2.0

mA

Average power supply

current, RAS refresh

mode or CBR

ICC3

RAS cycling, UCAS = LCAS

≥ V

IH,

tRC = min of RAS low after XCAS low.

–

80

–

70

mA

4

EDO page mode average

power supply current

ICC4

RAS = VIL, UCAS or LCAS,

address cycling: tHPC = min

–

85

–

75

mA

4, 5

CMOS standby power

supply current

ICC5

RAS = UCAS = LCAS = VCC - 0.2V,

F = 0

–

1–1

mA

Output voltage

VOH

IOUT = -5.0 mA

2.4

–2.4

–

V

VOL

IOUT = 4.2 mA

–

0.4

–

0.4

V

CAS before RAS refresh

current

ICC6

RAS, UCAS or LCAS cycling, tRC = min

–

80

–

70

mA

Self refresh current

ICC7

RAS = UCAS = LCAS

≤ 0.2V,

WE = OE

≥ V

CC - 0.2V,

all other inputs at 0.2V or

VCC - 0.2V

–

0.5

–

0.5

mA

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