AS4LC1M16E5-50JC datasheet(6/22 Pages) ETC

Part #	AS4LC1M16E5-50JC

Description	3V 1M X 6 CMOS DRAM (EDO)

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Manufacturer	ETC [List of Unclassifed Manufacturers]

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AS4LC1M16E5

4/11/01

Alliance Semiconductor

6

Write cycle

Shaded areas indicate advance information.

Read-modify-write cycle

Shaded areas indicate advance information.

Refresh cycle

Shaded areas indicate advance information.

Symbol

Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tWCS

Write command setup time

0

–0

–

ns

14

tWCH

Write command hold time

10

–10

–

ns

14

tWP

Write command pulse width

10

–10

–

ns

tRWL

Write command to RAS lead time

10

–10

–

ns

tCWL

Write command to CAS lead time

8

–10

–

ns

tDS

Data-in setup time

0

–0

–

ns

15

tDH

Data-in hold time

8

–10

–

ns

15

Symbol

Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tRWC

Read-write cycle time

113

–135

–

ns

tRWD

RAS to WE delay time

67

–

77

–

ns

14

tCWD

CAS to WE delay time

32

–

35

–

ns

14

tAWD

Column address to WE delay time

42

–

47

–

ns

14

Symbol

Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tCSR

CAS setup time (CAS-before-RAS)

5

–5

–

ns

6

tCHR

CAS hold time (CAS-before-RAS)

8

–10

–

ns

6

tRPC

RAS precharge to CAS hold time

0

–0

–

ns

tCPT

CAS precharge time

(CBR counter test)

10

–10

–

ns

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