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TIM1011-2L Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TIM1011-2L Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2 TIM1011-2L ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°°°°C ) C ) C ) C ) CHARACTERISTICS SYMBOL RATING UNIT Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V Drain Current IDS 2.6 A Total Power Dissipation (Tc= 25 °C) PT 15 W Channel Temperature Tch 175 °C Storage Tstg -65 ∼ +175 °C PACKAGE OUTLINE (2-9D1B) PACKAGE OUTLINE (2-9D1B) PACKAGE OUTLINE (2-9D1B) PACKAGE OUTLINE (2-9D1B) HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds Soldering iron should be grounded and the operating time should not exceed 10 seconds Soldering iron should be grounded and the operating time should not exceed 10 seconds Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 at 260 at 260 at 260 °°°°C. C. C. C. 4-R2.4 0.5 ±±±±0.15 13.0 ±±±±0.3 17.0 MAX. 8.5 MAX. Gate Source Drain Unit : mm |
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