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SUP75N06-08 Datasheet(PDF) 4 Page - TEMIC Semiconductors |
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SUP75N06-08 Datasheet(HTML) 4 Page - TEMIC Semiconductors |
4 / 4 page SUP/SUB75N06-08 4 Siliconix S-47969—Rev. D, 08-Jul-96 Typical Characteristics (25 _C Unless Otherwise Noted) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) 0 0.5 1.0 1.5 2.0 2.5 –50 –25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 VGS = 10 V ID = 30 A TJ = 25_C TJ = 150_C Thermal Ratings Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Safe Operating Area Maximum Avalanche and Drain Current vs. Case Temperature TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V) 100 500 10 1 0 20 40 60 80 100 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 10 ms 100 ms 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse Limited by rDS(on) 0.1 1 10 100 |
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