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SST39VF088-90-4C-EKE Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST39VF088-90-4C-EKE Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 22 page Preliminary Specifications ©2003 Silicon Storage Technology, Inc. S71227-04-000 11/03 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 8 Mbit (x8) Multi-Purpose Flash SST39VF088 FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 12 mA (typical) – Standby Current: 4 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – 70 and 90 ns • Latched Address and Data • Fast Erase and Byte-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) PRODUCT DESCRIPTION The SST39VF088 device is a 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF088 writes (Program or Erase) with a 2.7-3.6V power supply. It conforms to JEDEC stan- dard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39VF088 device provides a typical Byte-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufac- tured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39VF088 device is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. They also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Pro- gram cycles. To meet high density, surface mount requirements, the SST39VF088 is offered in 48-lead TSOP packaging. See Figure 1 for pin assignments. SST39VF0882.7V 8Mb (x8) MPF memory |
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