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Feb.1999 100 23 100 57 101 23 5 7 102 23 5 7 103 102 7 5 3 2 101 7 5 3 2 7 5 3 2 10–1 VGD = 0.2V IFGT I, IRGT III IRGT I VGT PG(AV) = 0.3W PGM = 3W IGM = 0.5A 23 10–1 57 100 23 5 7 101 23 5 7 102 4.0 4.5 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 23 102 57 103 23 5 7 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 4 4 –40 0 40 80 120 TYPICAL EXAMPLE 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 4 4 –40 0 40 80 120 IFGT I, IRGT I IRGT III TYPICAL EXAMPLE 5.0 4.0 3.0 2.0 1.0 4.5 3.5 2.5 1.5 0.5 0 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 130 110 90 70 50 120 100 80 60 40 30 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS MAXIMUM ON-STATE POWER DISSIPATION RMS ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) CONDUCTION TIME (CYCLES AT 60Hz) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE CHARACTERISTICS MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
