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RA30H3340M-E01 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # RA30H3340M-E01
Description  MITSUBISHI RF MOSFET MODULE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA30H3340M-E01 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, TOTAL EFFICIENCY,
2
nd, 3
rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
0
10
20
30
40
50
60
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
0
20
40
60
80
100
120
VDD=12.5V
VGG=5V
Pin=50mW
Pout
η
T
ρ
in
0
10
20
30
40
50
60
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
2
4
6
8
10
12
f=330MHz,
VDD=12.5V,
VGG=5V
Pout
IDD
Gp
0
10
20
30
40
50
60
-10
-5
0
5
10
15
20
INPUT POWER P in(dBm)
0
2
4
6
8
10
12
f=365MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD
-70
-60
-50
-40
-30
-20
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
VDD=12.5V
VGG=5V
Pin=50mW
2
nd
3
rd
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
2
4
6
8
10
12
14
16
18
Pout
f=330MHz,
VGG=5V,
Pin=50mW
IDD
0
10
20
30
40
50
60
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
2
4
6
8
10
12
f=400MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
2
4
6
8
10
12
14
16
18
Pout
IDD
f=365MHz,
VGG=5V,
Pin=50mW
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)


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