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4-58
NBB-502
Rev A4 050414
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
300
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
VD=+3.9V, ICC=35mA, Z0=50Ω, TA=+25°C
Small Signal Power Gain, S21
19.0
20.5
dB
f=0.1GHz to 1.0GHz
19.0
dB
f=1.0GHz to 2.0GHz
16.0
17.0
dB
f=2.0GHz to 4.0GHz
Gain Flatness, GF
±0.8
dB
f=1.0GHz to 3.0GHz
Input and Output VSWR
1.55:1
f=0.1GHz to 4.0GHz
1.50:1
f=4.0GHz to 6.0GHz
1.55:1
f=6.0GHz to 10.0GHz
Bandwidth, BW
4.2
GHz
BW3 (3dB)
Output Power @
-1dB Compression, P1dB
13.0
dBm
f=2.0GHz
14.0
dBm
f=6.0GHz
Noise Figure, NF
4.0
dB
f=3.0GHz
Third Order Intercept, IP3
+23.0
dBm
f=2.0GHz
Reverse Isolation, S12
-17.0
dB
f=0.1GHz to 10.0GHz
Device Voltage, VD
3.6
3.9
4.2
V
Gain Temperature Coefficient,
δG
T/δT
-0.0015
dB/°C
MTTF versus Temperature
@ ICC=35mA
Case Temperature
85
°C
Junction Temperature
109.4
°C
MTTF
>1,000,000
hours
Thermal Resistance
θ
JC
179
°C/W
JT TCASE
–
VD ICC
⋅
---------------------------
θ
JC °CWatt
⁄
()
=
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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