MB84SD23280FE datasheet(3/40 Pages) SPANSION

Part #	MB84SD23280FE

Description	64M (X16) FLASH MEMORY 8M (X16) SRAM

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Manufacturer	SPANSION [SPANSION]

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MB84SD23280FA/MB84SD23280FE-70

2

(Continued)

•••• FLASH MEMORY

•0.17

µµµµm process technology

• Simultaneous Read/Write operation (Dual Bank)

• FlexBankTM *1

Bank A: 16M bit (16KB

× 4 and 64KB × 31)

Bank B: 16M bit (64KB

× 32)

Bank C: 16M bit (64KB

× 32)

Bank D: 16M bit (16KB

× 4 and 64KB × 31)

• Minimum 100,000 program/erase cycles

• Sector Erase Architecture

Four 8K words, a hundred twenty-eight 32K words sectors.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

•WP Input Pin

At VIL, allows protection of all sectors, regardless of sector protection/unprotection status

At VIH, allows removal of sector protection

• Embedded EraseTM *2 Algorithms

Automatically preprograms and erases the chip or any sector

• Embedded ProgramTM *2 Algorithms

Automatically writes and verifies data at specified address

•Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Automatic sleep mode

When address remain stable, the device automatically switches itself to low power mode

•Low VCC write inhibit

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

resumes the erase operation

• Sector Protection

Software command sector locking

• Please Refer to “MBM29BS64LF” Datasheet in Detailed Function

••••SRAM

• Power Dissipation

Operating : 50 mA Max

Standby :15

µA Max

• Power Down Features using CE1s and CE2s

• Data Retention Supply Voltage: 1.0 V to 1.95 V

•CE1s and CE2s Chip Select

• Byte Data Control: LB (DQ7 to DQ0), UB (DQ15 to DQ8)

*1: FlexBankTM is a trademark of Fujitsu Limited, Japan.

*2: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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