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K6R4008V1B-C12 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K6R4008V1B-C12 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 10 page K6R4008V1B-C/B-L, K6R4008V1B-I/B-P CMOS SRAM PRELIMINARY Rev 2.2 - 3 - May 1999 PIN CONFIGURATION(Top View) 36-SOJ/ N.C A18 A17 A16 A15 OE I/O8 I/O7 Vss Vcc I/O6 I/O5 A14 A13 A12 A11 A10 N.C A0 A1 A2 A3 A4 CS I/O1 I/O2 Vcc Vss I/O3 I/O4 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 TSOP2 PIN FUNCTION Pin Name Pin Function A0 - A18 Address Inputs WE Write Enable CS Chip Select OE Output Enable I/O1 ~ I/O8 Data Inputs/Outputs VCC Power(+3.3V) VSS Ground N.C No Connection 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 N.C N.C A0 A1 A2 A3 A4 CS I/O1 I/O2 Vcc Vss I/O3 I/O4 WE A5 A6 A7 A8 A9 N.C N.C N.C N.C N.C A18 A17 A16 A15 OE I/O8 I/O7 Vss Vcc I/O6 I/O5 A14 A13 A12 A11 A10 N.C N.C N.C 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 44-TSOP2 ABSOLUTE MAXIMUM RATINGS* * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Symbol Rating Unit Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to 4.6 V Voltage on VCC Supply Relative to VSS VCC -0.5 to 4.6 V Power Dissipation PD 1.0 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TA 0 to 70 °C Industrial TA -40 to 85 °C |
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