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IDT71V416VS12YG Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT71V416VS12YG Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 9 page 6.42 IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges 7 Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,3) NOTES: 1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE. 2. During this period, I/O pins are in the output state, and input signals must not be applied. 3. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state. Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing)(1,3) ADDRESS CS DATAIN DATAIN VALID tWC tAS (2) tCW tWR WE tAW DATAOUT tDW tDH BHE, BLE tBW tWP 6478 d09 ADDRESS CS DATAIN DATAIN VALID tWC tAS (2) tCW tWR WE tAW DATAOUT tDW tDH BHE, BLE tBW tWP 6478 d10 |
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