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CEB06N5 Datasheet(PDF) 4 Page - Chino-Excel Technology |
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CEB06N5 Datasheet(HTML) 4 Page - Chino-Excel Technology |
4 / 5 page 4-20 with Temperature Figure 6. Breakdown Voltage Variation with Temperature with Drain Current IDS, Drain-Source Current (A) Figure 8. Body Diode Forward Voltage Variation with Source Current VSD, Body Diode Forward Voltage (V) Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation Figure 7. Transconductance Variation Figure 3. Capacitance VDS, Drain-to Source Voltage (V) CEP06N5/CEB06N5 1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250 A Figure 4. On-Resistance Variation with Temperature TJ, Junction Temperature( C) -100 -50 0 50 100 200 2.2 1.9 1.6 1.3 1.0 0.7 0.4 VGS=10V ID=4 150 Ciss Coss Crss 1200 1000 800 600 400 200 0 0 5 10 15 20 25 20 10 0.1 1 0.4 0.6 0.8 1.2 1.0 VGS=0V 3 4 0 1 2 0 1 23 4 VDS=50V 4 4 |
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