CEB06N5 datasheet(4/5 Pages) CET

Part #	CEB06N5

Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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4-20

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

with Drain Current

IDS, Drain-Source Current (A)

Figure 8. Body Diode Forward Voltage

Variation with Source Current

VSD, Body Diode Forward Voltage (V)

Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation

Figure 7. Transconductance Variation

Figure 3. Capacitance

VDS, Drain-to Source Voltage (V)

CEP06N5/CEB06N5

1.30

1.20

1.10

1.0

0.90

0.80

0.70

0.60

-50 -25

0

25

50

75

100 125 150

VDS=VGS

ID=250 A

-50

-25

0

25

50

75 100 125 150

1.15

1.10

1.05

1.00

0.95

0.90

0.85

ID=250 A

Figure 4. On-Resistance Variation with

Temperature

TJ, Junction Temperature( C)

-100

-50

0

50

100

200

2.2

1.9

1.6

1.3

1.0

0.7

0.4

VGS=10V

ID=4

150

Ciss

Coss

Crss

1200

1000

800

600

400

200

0

5

10

15

20

25

20

10

0.1

1

0.4

0.6

0.8

1.2

1.0

VGS=0V

3

4

0

1

2

0

1

23

4

VDS=50V

4

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