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BS616LV1012ECP55 Datasheet(PDF) 3 Page - Brilliance Semiconductor |
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BS616LV1012ECP55 Datasheet(HTML) 3 Page - Brilliance Semiconductor |
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3 / 9 page  Revision 1.0 Apr. 2004 3 R0201-BS616LV1012 SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 1.5 -- -- V ICCDR Data Retention Current CE ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V -- 0.15 0.8 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns tR Operation Recovery Time See Retention Waveform TRC (2) -- -- ns SYMBOL PARAMETER CONDITIONS MAX. UNIT CIN Input Capacitance VIN=0V 6 pF CDQ Input/Output Capacitance VI/O=0V 8 pF RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70 O C 2.4V ~ 3.6V Industrial -40 O C to +85 O C 2.4V ~ 3.6V DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC ) ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 1. This parameter is guaranteed and not 100% tested. DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC ) BSI BS616LV1012 PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS Vcc=3.0V VIL Guaranteed Input Low Voltage (2) -0.5 -- 0.8 V Vcc=3.0V 2.0 VIH Guaranteed Input High Voltage (3) -- Vcc+0.3 V IIL Input Leakage Current Vcc = Max, VIN = 0V to Vcc -- -- 1 uA ILO Output Leakage Current Vcc = Max, CE = VIH, or OE = VIH, VI/O = 0V to Vcc -- -- 1 uA Vcc=3.0V VOL Output Low Voltage Vcc = Max, IOL = 2mA -- -- 0.4 V Vcc=3.0V VOH Output High Voltage Vcc = Min, IOH = -1mA 2.4 -- -- V Vcc=3.0V -- -- 23 ICC Operating Power Supply Current CE = VIL, IDQ = 0mA, mA Vcc=3.0V -- -- 1 ICCSB Standby Current-TTL CE = VIH, IDQ = 0mA mA Vcc=3.0V -- 0.4 ICCSB1 Standby Current-CMOS CE ≧ Vcc -0.2V, VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 2.5 uA SYMBOL PARAMETER RATING UNITS V TERM Terminal Voltage with Respect to GND -0.5 to Vcc+0.5 V T BIAS Temperature Under Bias -40 to +85 O C T STG Storage Temperature -60 to +150 O C P T Power Dissipation 1.0 W I OUT DC Output Current 20 mA V cc Power Supply Voltage V -0.5 to Vcc+0.5 F = Fmax (4) 55ns 70ns 18 (5) (6) 1. Typical characteristics are at TA = 25oC. 2. Undershoot : -1.5V in case of pulse width ≦20ns. 3. Overshoot : Vcc+1.5V in case of pulse width ≦20ns. 4. Fmax = 1/t RC . 5. IccsB1_Max. is 1.3uA at Vcc=3.0V and TA=70oC. 6. Icc_Max. is 22mA(@55ns)/17mA(@70ns) at Vcc=3.0V and TA=0~70oC. (3) 1. Vcc = 1.5V, TA = + 25OC2. tRC = Read Cycle Time 3. IccDR_MAX. is 0.45uA at TA=70OC. |
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