SS2P3 datasheet(2/4 Pages) VISHAY

Part #	SS2P3

Description	High Current Density Surface Mount Schottky Barrier Rectifiers

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Document Number 88910

02-Nov-04

VISHAY

SS2P2, SS2P3 & SS2P4

Vishay Semiconductors

Electrical Characteristics

TA = 25 °C, unless otherwise specified

Notes:

(1) Pulse test: 300µs pulse width, 1 % duty cycle

Thermal Characteristics

TA = 25 °C, unless otherwise specified

Notes:

(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is mea-

sured at the terminal of cathode band. RθJC is measured at the top centre of the body

Parameter

Test condition

Symbol

Typ

Max.

Unit

Maximum instantaneous

forward voltage(1)

at IF = 2 A, TJ = 25 °C

at IF = 2 A, TJ = 125 °C

VF

0.50

0.43

0.55

0.50

V

Maximum reverse current at

rated VRM(1)

TJ = 25 °C

TJ = 125 °C

IR

-

8

150

15

µA

mA

Typical junction capacitance

at 4.0 V, 1 MHz

CJ

110

pF

Parameter

Symbol

SS2P2

SS2P3

SS2P4

Unit

Typical thermal resistance(1)

RθJA

RθJL

RθJC

115

15

20

°C/W

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