SSM9926M datasheet(2/6 Pages) ETC

Part #	SSM9926M

Description	DUAL N CHANNEL ENHANCEMENT MODE POWER MOSFETS

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SSM9926M

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

20

-

V

∆BV

DSS

/ ∆ Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

-

0.03

-

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=6A

-

30

m

Ω

VGS=2.5V, ID=5.2A

-

40

m

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

0.5

-

1.2

V

gfs

Forward Transconductance

VDS=10V, ID=6A

-

17

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=20V, VGS=0V

-

1

uA

Drain-Source Leakage Current (Tj=70

oC)

VDS=20V ,VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=-

-

nA

Qg

Total Gate Charge

2

ID=6A

-

18

-

nC

Qgs

Gate-Source Charge

VDS=20V

-

1.1

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=5V

-

7.4

-

nC

td(on)

Turn-on Delay Time

2

VDS=10V

-

7.2

-

ns

tr

Rise Time

ID=1A

-

12.8

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=5V

-

30.5

-

ns

tf

Fall Time

RD=10Ω

-

10.5

-

ns

Ciss

Input Capacitance

VGS=0V

-

510

-

pF

Coss

Output Capacitance

VDS=20V

-

245

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

110

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

2

Tj=25°C, IS=1.7A, VGS=0V

-

1.2

V

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10 sec.

4.Pulse width <10us , duty cycle <1%.

± 8V

±100

Rev.2.01 6/26/2003

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