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HLX6228KSH Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 12 page OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical Operating Power <9 mW/MHz • JEDEC Standard Low Voltage CMOS Compatible I/O • Single 3.3 V ± 0.3 V Power Supply • Asynchronous Operation • Packaging Options – 32-Lead CFP (0.820 in. x 0.600 in.) – 40-Lead CFP (0.775 in. x 0.710 in.) 128K x 8 STATIC RAM—Low Power SOI Military & Space Products RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Low Power Process (L eff = 0.55 µm) • Total Dose Hardness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Soft Error Rate of <1x10-10 Upsets/bit-day in Geosyn- chronous Orbit • No Latchup Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.myspaceparts.com FEATURES GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. The RAM is compatible with JEDEC standard low voltage CMOS I/O. Power consumption is typically less than 9 mW/MHz in operation, and less than 2 mW when de- selected. The RAM read operation is fully asynchronous, with an associated typical access time of 32 ns at 3.3 V. Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insensi- tive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques.TheRICMOS™IVlow power process is a SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.7 µm (0.55 µm effective gate length—L eff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening. HLX6228 |
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