FQP32N20C datasheet(3/10 Pages) FAIRCHILD

Part #	FQP32N20C

Description	200V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Rev. A, March 2004

0

2040

6080

100

0

2

4

6

8

10

12

V

DS = 100V

V

DS = 40V

V

DS = 160V

Note : I

※

D = 32.0A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

※

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.0

0.4

0.8

1.2

1.6

2.0

10

-1

10

0

10

1

10

2

150℃

Notes :

※

1. V

GS = 0V

2. 250µ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

20

406080

100

0.0

0.1

0.2

0.3

V

GS = 20V

V

GS = 10V

Note : T

※

J = 25℃

I

D, Drain Current [A]

246

8

10

-1

10

0

10

1

10

2

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 40V

2. 250µ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :

※

1. 250µ s Pulse Test

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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