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EN29LV160A Datasheet(PDF) 13 Page - Eon Silicon Solution Inc.

Part # EN29LV160A
Description  16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
13
EN29LV160A
COMMAND DEFINITIONS
The operations of the EN29LV160A are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register.
The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 9. EN29LV160A Command Definitions
Bus Cycles
1
st
Write Cycle
2
nd
Write Cycle
3
rd
Write Cycle
4
th
Write Cycle
5
th
Write Cycle
6
th
Write Cycle
Command
Sequence
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read
1
RA
RD
Reset
1
xxx
F0
000
7F
Word
555
2AA
555
100
1C
000
7F
Manufacturer
ID
Byte
4
AAA
AA
555
55
AAA
90
200
1C
Word
555
2AA
555
x01
22C4
Device ID
Top Boot
Byte
4
AAA
AA
555
55
AAA
90
x02
C4
Word
555
2AA
555
x01
2249
Device ID
Bottom Boot
Byte
4
AAA
AA
555
55
AAA
90
x02
49
XX00
Word
555
2AA
555
(SA)
X02
XX01
00
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
(SA)
X04
01
Word
555
2AA
555
Program
Byte
4
AAA
AA
555
55
AAA
A0
PA
PD
Word
555
2AA
555
Unlock Bypass
Byte
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program
2
XXX
A0
PA
PD
Unlock Bypass Reset
2
XXX
90
XXX
00
Word
555
2AA
555
555
2AA
555
Chip Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Word
555
2AA
555
555
2AA
Sector Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Erase Suspend
1
xxx
B0
Erase Resume
1
xxx
30
Word
55
CFI Query
Byte
1
AA
98
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program
or Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read
array data using the standard read timings, with the only difference in that if it reads at an address
Rev. C, Issue Date: 2005/01/07


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