AAT8660B datasheet(4/24 Pages) ETC

Part #	AAT8660B

Description	ONE-CELL LI-ION BATTERY PROTECTION IC

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Advanced Analog Technology, Inc.

–

台灣類比科技股份有限公司 –

–

Advanced Analog Technology, Inc. –

Page 4 of 24

V 1.0

AAT8660 Series

AAT8660A DETECTION VOLTAGE AND DELAY TIME (

C

25o

)

PARAMETER

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Over Charge Threshold Voltage

1

C

V

Detect Rising Edge of Supply

Voltage

4.275

4.325

4.375

V

Over Charge Release Voltage

2

C

V

Detect Falling Edge of Supply

Voltage

VC1-0.35 VC1-0.25

VC1-0.15

V

Over Discharge Threshold

Voltage

1

D

V

Detect Falling Edge of Supply

Voltage

2.420

2.500

2.580

V

Over Discharge Release Voltage

2

D

V

Detect Rising Edge of Supply

Voltage

VD1+0.3 VD1+0.4

VD1+0.5

V

Over Charge Delay Time

1

C

t

3.6V

V

DD =

to 4.5V

0.700

1.000

1.300

s

Over Discharge Delay Time

1

D

t

V

6

.

3

V

DD =

to 2.4V

87.5

125.0

162.5

ms

Over Current Level 1 Detection

Voltage

1

OC

V

Detect Rising Edge of “VN” Pin

Voltage (

out

D Response with tOC1

Delay Time)

130

150

170

mV

Over Current Level 2 Detection

Voltage

2

OC

V

Detect Rising Edge of “VN”

Pin Voltage (

out

D

Response

with tOC2 Delay Time)

400

500

600

mV

Short Circuit Detection Voltage

short

V

0

.

3

V

DD =

, Detect Rising Edge

of “VN” Pin Voltage (

out

D

Response with

short

t

Delay

Time)

7

.

1

V

DD −

3

.

1

V

DD −

9

.

0

V

DD −

V

Over Current Level 1 Detection

Delay Time

1

OC

t

V

0

.

3

V

DD =

5.6

8.0

10.4

ms

Over Current Level 2 Detection

Delay Time

2

OC

t

Room Temp.

⇒

Low or High Temp.

⇒

V

0

.

3

V

DD =

1.4

1.1

2.0

2.6

3.4

ms

Short Circuit Detection Delay

Time

short

t

V

0

.

3

V

DD =

10

50

s

µ

Charger Detection Voltage

CHR

V

Detect Rising Edge of “

out

D”

Pin Voltage (when VD1＜VDD＜

VD2)

0

.

2

−

3

.

1

−

6

.

0

−

V

out

C

High Level Resistance

COH

R

V

5

.

3

V

DD =

;

V

0

.

3

C

out =

;

V

0

VN

=

1

2

10

Ω

k

out

C

Low Level Resistance

COL

R

V

5

.

4

V

DD =

;

V

5

.

0

C

out =

;V

0

VN

=

150

602

2,380

Ω

k

out

D

High Level Resistance

DOH

R

V

5

.

3

V

DD =

;V

0

.

3

D

out =

;

V

0

VN

=

2.5

5.0

10.0

Ω

k

out

D

Low Level Resistance

DOL

R

V

8

.

1

V

DD =

;

V

5

.

0

D

out =

;V

8

.

1

VN

=

2.5

5.0

10.0

Ω

k

Internal Resistance between VN

and

DD

V

VND

R

V

8

.

1

V

DD =

;

V

0

VN

=

100

300

900

Ω

k

Internal Resistance between VN

and GND

VNG

R

V

5

.

3

V

DD =

;

V

5

.

3

VN

=

10

20

40

Ω

k

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