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TC9488F Datasheet(PDF) 8 Page - Toshiba Semiconductor

Part # TC9488F
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC9488F Datasheet(HTML) 8 Page - Toshiba Semiconductor

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TC9455,88F/N
2002-02-05
8
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD
−0.3~6.0
V
Input voltage
Vin
−0.3~VDD + 0.3
V
TC9455/88F
200

Power dissipation
PD
TC9455/88N
300

mW
Operating temperature
Topr
−25~85
°C
Storage temperature
Tstg
−55~150
°C
Electrical Characteristics (unless otherwise specified, Ta = 25°C, VDD = 5.0 V)
DC characteristics
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Operating supply voltage
VDD
―
Ta = −25~85°C
4.5
5.0
5.5
V
Operating supply current
IDD
―
Fmck = 4 MHz
―
20
30
mA
Operating frequency
Fmck
―
fs = 32 kHz typ.
―
4.0
―
MHz
Power-on reset voltage
Vpor
―
―
4.0
4.25
V
“H” level
VIH
―
VDD
× 0.8
―
VDD
Input voltage
“L” level
VIL
―
0
―
VDD
× 0.2
V
“H” level
IIH
―
―
―
1.0
Input current
“L” level
IIL
―
−1.0
―
―
µA
Volume control (when VOLST = “L”)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Hysteresis voltage
VH
―
―
0.12
―
V
Input step width
VST
―
―
0.26
―
V
Min level input voltage
VImin
―
―
1.1
0.8
V
Max level input voltage
VImax
―
4.95
4.8
―
V


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