RN2112FT datasheet(2/3 Pages) TOSHIBA

Part #	RN2112FT

Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 3 page

RN2112FT,RN2113FT

2002-01-24

2

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = -50 V, IE = 0

¾

-100

nA

Emitter cut-off current

IEBO

VEB = -5 V, IC = 0

¾

-100

nA

DC current gain

hFE

VCE = -5 V, IC = -1 mA

120

¾

400

Collector-emitter saturation voltage

VCE (sat)

IC = -5 mA, IB = -0.25 mA

¾

-0.1

-0.3

V

Transition frequency

fT

VCE = -10 V, IC = -5 mA

¾

200

¾

MHz

Collector output capacitance

Cob

VCB = -10 V, IE = 0, f = 1 MHz

¾

3

6

pF

RN2112FT

15.4

22

28.6

Input resistor

RN2113FT

R1

¾

32.9

47

61.1

k

W

Type Name

Marking

RN1112FT

RN1113FT

Type name

Y N

Type name

Y P

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