PMEGXX10BEV datasheet(4/11 Pages) PHILIPS

Part #	PMEGXX10BEV

Description	1 A very low VF MEGA Schottky barrier rectifier

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

4 / 11 page

2004 Jun 14

4

Philips Semiconductors

Product speciﬁcation

1 A very low VF MEGA Schottky

barrier rectiﬁer

PMEGXX10BEA;

PMEGXX10BEV

THERMAL CHARACTERISTICS

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses

PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)

rating will be available on request.

3. Device mounted on an FR4 printed-circuit board with copper clad 10

× 10 mm.

4. Solder point of cathode tab.

5. Refer to SOT666 standard mounting conditions.

6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

PMEGXX10BEA (SOD323)

Rth(j-a)

thermal resistance from junction to

ambient

in free air; notes 1 and 2

450

K/W

in free air; notes 2 and 3

210

K/W

Rth(j-s)

thermal resistance from junction to

soldering point

note 4

90

K/W

PMEGXX10BEV (SOT666)

Rth(j-a)

thermal resistance from junction to

ambient

in free air; notes 2 and 5

405

K/W

in free air; notes 2 and 6

215

K/W

Rth(j-s)

thermal resistance from junction to

soldering point

note 4

80

K/W

SYMBOL

PARAMETER

CONDITIONS

PMEG2010BEA/

PMEG2010BEV

PMEG3010BEA/

PMEG3010BEV

PMEG4010BEA/

PMEG4010BEV

UNIT

TYP.

MAX.

TYP.

MAX.

TYP.

MAX.

VF

forward voltage

IF = 0.1 mA

90

130

90

130

95

130

mV

IF = 1 mA

150

190

150

200

155

210

mV

IF = 10 mA

210

240

215

250

220

270

mV

IF = 100 mA

280

330

285

340

295

350

mV

IF = 500 mA

355

390

380

430

420

470

mV

IF = 1000 mA

420

500

450

560

540

640

mV

IR

continuous reverse

current

VR = 10 V; note 1

15

40

12

30

7

20

µA

VR = 20 V; note 1

40

200

−−−−µA

VR = 30 V; note 1

−−

40

150

−−µA

VR = 40 V; note 1

−−−−

30

100

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz

66

80

55

70

43

50

pF

Similar Part No. - PMEGXX10BEV

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PMEGXX10BEV	165Kb / 11P	1 A very low VF MEGA Schottky barrier rectifier 2004 Jun 14
Nexperia B.V. All right...	PMEGXX10BEV	164Kb / 11P	1 A very low VF MEGA Schottky barrier rectifier 2004 Jun 14

More results

Similar Description - PMEGXX10BEV

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PMEG2010AEK	66Kb / 9P	1 A very low VF MEGA Schottky barrier rectifier Rev. 01-30 March 2007
Nexperia B.V. All right...	PMEG2010BEV	187Kb / 8P	1 A very low VF MEGA Schottky barrier rectifier 4 January 2023
	PMEG2010BEA	198Kb / 10P	1 A very low VF MEGA Schottky barrier rectifier 15 July 2020
	PMEG4010BEA-Q	195Kb / 9P	1 A very low VF MEGA Schottky barrier rectifier 15 September 2021
	PMEG4010ET-Q	198Kb / 10P	1 A very low VF MEGA Schottky barrier rectifier 25 October 2021
	PMEG3010BEV	186Kb / 8P	1 A very low VF MEGA Schottky barrier rectifier 4 January 2023
	PMEGXX10BEA	164Kb / 11P	1 A very low VF MEGA Schottky barrier rectifier 2004 Jun 14
NXP Semiconductors	PMEG3010EB	64Kb / 9P	1 A very low VF MEGA Schottky barrier rectifier Rev. 01-1 December 2006
	PMEGXX10BEA	165Kb / 11P	1 A very low VF MEGA Schottky barrier rectifier 2004 Jun 14
	PMEG3010EB	166Kb / 9P	1 A very low VF MEGA Schottky barrier rectifier Rev. 2-15 March 2012

More results

PMEGXX10BEV Datasheet(PDF) 4 Page - NXP Semiconductors

PMEGXX10BEV Datasheet(HTML) 4 Page - NXP Semiconductors

Similar Part No. - PMEGXX10BEV

Similar Description - PMEGXX10BEV

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL