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PMEGXX10BEA Datasheet(PDF) 6 Page - NXP Semiconductors |
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PMEGXX10BEA Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 11 page 2004 Jun 14 6 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV 30 VR (V) 10 5 020 25 15 IR ( µA) 105 104 103 102 10 1 MHC677 (1) (3) (2) Fig.7 Reverse current as a function of reverse voltage; typical values. PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 0 5 10 20 VR (V) 120 100 0 40 20 80 60 15 Cd (pF) MHC678 Fig.8 Diode capacitance as a function of reverse voltage; typical values. PMEG3010BEA/PMEG3010BEV Tamb =25 °C; f = 1 MHz. handbook, halfpage 0.6 VF (V) 0.4 IF (mA) 0.2 0 104 103 102 10 1 10−1 MHC679 (1) (2) (3) Fig.9 Forward current as a function of forward voltage; typical values. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 40 20 10 030 MHC680 105 104 103 102 10 1 VR (V) IR ( µA) (1) (3) (2) Fig.10 Reverse current as a function of reverse voltage; typical values. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. |
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