SFH4289 datasheet(3/6 Pages) ETC

Part #	SFH4289

Description	GaAlAs-IR-Lumineszenzdiode in SMT-Geh짰se mit Linse GaAlAs Infrared Emitter in SMT Package with lens

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SFH 4289

2001-10-09

3

Kennwerte (

T

A = 25 °C)

Characteristics

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

I

F = 100 mA, tp = 20 ms

λ

peak

880

nm

Spektrale Bandbreite bei 50% von

I

max

Spectral bandwidth at 50% of

I

max

I

F = 100 m A

∆λ

80

nm

Abstrahlwinkel

Half angle

ϕ± 25

Grad

deg.

Aktive Chipfläche

Active chip area

A

0.09

mm

2

Abmessungen der aktiven Chipfläche

Dimensions of the active chip area

L

× B

L

× W

0.3

× 0.3

mm

Schaltzeiten, I

e von 10% auf 90% und von 90%

auf 10%, bei

I

F = 100 mA, RL = 50 Ω

Switching times,

Ι

e from 10% to 90% and from

90% to10%,

I

F = 100 mA, RL = 50 Ω

t

r, tf

0.5

µs

Kapazität,

Capacitance

V

R = 0 V, f = 1 MHz

C

o

15

pF

Durchlaßspannung,

Forward voltage

I

F = 100 mA, tp = 20 ms

I

F = 1 A, tp = 100 µs

V

F

V

F

1.5 (

≤ 1.8)

3.0 (

≤ 3.8)

V

Sperrstrom,

Reverse current

V

R = 5 V

I

R

0.01 (

≤ 1)

µA

Gesamtstrahlungsfluß,

Total radiant flux

I

F = 100 mA, tp = 20 ms

Φ

e

23

mW

Temperaturkoeffizient von I

e bzw. Φe,

I

F = 100 mA

Temperature coefficient of I

e or Φe, IF = 100 mA

TC

I

– 0.5

%/K

Temperaturkoeffizient von

V

F, IF = 100 mA

Temperature coefficient of

V

F, IF = 100 mA

TC

V

– 2mV/K

Temperaturkoeffizient von

λ, I

F = 100 mA

Temperature coefficient of

λ, I

F = 100 mA

TCλ

+ 0.25

nm/K

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