RF POWER SILICON LD-MOS FET

FEATURES

• HIGH OUTPUT POWER:

• HIGH POWER ADDED EFFICIENCY:

• HIGH LINEAR GAIN:

• SURFACE MOUNT PACKAGE:

5.7 x 5.7 x 1.1 mm MAX

• SINGLE SUPPLY:

NE5511279A

DESCRIPTION

NEC's NE5511279A is an N-Channel silicon power laterally

diffused MOSFET specially designed as the transmission

power amplifier for 7.5 V radio systems. Die are manu-

factured using NEC's NEWMOS1 technology and housed in

a surface mount package. This device can deliver 40.0 dBm

output power with 48% power added efficiency at 900 MHz

using a 7.5 V supply voltage.

• UHF RADIO SYSTEMS

• CELLULAR REPEATERS

• TWO-WAY RADIOS

• FRS/GMRS

• FIXED WIRELESS

APPLICATIONS

California Eastern Laboratories

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

TEST CONDITIONS

Output Power

38.5

40.0

−

dBm

Drain Current

−

2.5

−

Power Added Efficiency

42

48

−

%

Linear Gain

−

15.0

−

dB

Output Power

−

40.5

−

dBm

Drain Current

−

2.75

−

Power Added Efficiency

−

50

−

%

Linear Gain

−

18.5

−

dB

Gate to Source Leak Current

−−

100

nA

Drain to Source Leakage Current

(Zero Gate Voltage Drain Current)

−−

100

nA

Gate Threshold Voltage

1.0

1.5

2.0

V

Thermal Resistance

−

5

−

°C/W

Channel to Case

Transconductance

−

2.3

−

Drain to Source Breakdown Voltage

20

24

−

Notes:

DC performance is 100% tested. RF performance is tested on several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

PACKAGE OUTLINE 79A

(Bottom View)

3.6±0.2

1.5±0.2

0.8 MAX.

Source

Gate

Drain

0.4±0.15

5.7 MAX.

4.2 MAX.

Source

Gate

Drain