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MAX4704EUB Datasheet(PDF) 2 Page - Maxim Integrated Products |
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MAX4704EUB Datasheet(HTML) 2 Page - Maxim Integrated Products |
2 / 11 page Low-Voltage, 60 Ω, 4:1 Analog Multiplexer in QFN 2 _______________________________________________________________________________________ ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS—Single +3V Supply (V+ = +2.7V to +3.3V, VIH = +1.4V, VIL = +0.5V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at V+ = +3V and TA = +25°C.) (Notes 2, 3) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 1: Signals on INH, ADD_, NO_, and COM exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to maximum current rating. (Voltages Referenced to GND) V+ .............................................................................-0.3V to +6V All Other Pins (Note 1)................................ -0.3V to (V+ + 0.3V) Continuous Current COM, NO_ ........................................±20mA Peak Current COM, NO_ (pulsed at 1ms, 10% duty cycle)..................................±40mA ESD per Method 3015.7.......................................................>2kV Continuous Power Dissipation (TA = +70°C) 10-Pin µMAX (derate 4.7mW/°C above +70°C) ......... 330mW 12-Pin QFN (derate 11.9mW/°C above +70°C) ......... 952mW Operating Temperature Range .......................... -40°C to +85°C Storage Temperature Range ............................ -65°C to +150°C Lead Temperature (soldering, 10s) ................................ +300°C PARAMETER SYMBOL CONDITIONS TA MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range VCOM, VNO_ 0V+ V +25 °C50 60 On-Resistance RON V+ = +2.7V, ICOM = 5mA, VNO_ = +1.3V TMIN to TMAX 70 Ω +25 °C1 3 On-Resistance Match Between Channels (Note 4) ∆RON V+ = +2.7V, ICOM = 5mA, VNO_ = +1.3V TMIN to TMAX 5 Ω +25 °C3 5 On-Resistance Flatness (Note 5) RFLAT (ON) V+ = +2.7V, ICOM = 5mA, VNO_ = +1V, +1.3V, +1.8V TMIN to TMAX 10 Ω +25 °C -0.1 ±0.01 0.1 NO_ Off-Leakage Current (Note 6) INO_(OFF) V+ = +3.3V, VCOM = +0.3V, +3V VNO_ = +3V, +0.3V TMIN to TMAX -1 1 nA +25 °C -0.5 ±0.01 0.5 COM On-Leakage Current (Note 6) ICOM(ON) V+ = +3.3V, VCOM = +0.3V, +3V VNO_ = +0.3V, +3V, or floating TMIN to TMAX -5 5 nA +25 °C -0.5 ±0.01 0.5 COM Off-Leakage Current (Note 6) ICOM(OFF) V+ = +3.3V, VCOM = +0.3V, +3V VNO_ = +3V, +0.3V TMIN to TMAX -5 5 nA DYNAMIC +25 °C20 60 Address Transition Time tTRANS VNO_ = +1.5V, RL = 300 Ω, CL = 35pF, Figure 2 TMIN to TMAX 70 ns +25 °C25 60 Inhibit Turn-On Time tON VNO_ = +1.5V, RL = 300 Ω, CL = 35pF, Figure 3 TMIN to TMAX 70 ns +25 °C10 20 Inhibit Turn-Off Time tOFF VNO_ = +1.5V, RL = 300 Ω, CL = 35pF, Figure 3 TMIN to TMAX 30 ns +25 °C20 Break-Before-Make Time (Note 7) tBBM VNO_ = +1.5V, RL = 300 Ω, CL = 35pF, Figure 4 TMIN to TMAX 2 ns Charge Injection Q VGEN = 0, RGEN = 0, CL = 1.0nF, Figure 5 2pC |
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