M464S1724ETS-CL7A datasheet(9/15 Pages) SAMSUNG

Part #	M464S1724ETS-CL7A

Description	64MB, 128MB Unbuffered SODIMM

Download	15 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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9 / 15 page

64MB, 128MB Unbuffered SODIMM

Rev. 1.4 March. 2004

SDRAM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit

Note

-7A

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

400

mA

1

Precharge standby current

in power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

8

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC =∞

8

Precharge standby current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

80

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

40

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

20

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC =∞

20

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

120

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

100

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks activated

tCCD = 2CLKs

560

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

800

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

C

8

mA

L

3.2

mA

1. Measured with outputs open.

2. Refresh period is 64ms.

Notes :

M464S0924ETS (8M x 64, 64MB Module)

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