Electronic Components Datasheet Search |
|
K9K8G08U0M Datasheet(PDF) 14 Page - Samsung semiconductor |
|
K9K8G08U0M Datasheet(HTML) 14 Page - Samsung semiconductor |
14 / 49 page FLASH MEMORY 14 Preliminary K9WAG08U1M K9K8G08U0M AC Characteristics for Operation NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5 µs. Parameter Symbol Min Max Unit Data Transfer from Cell to Register tR -20 µs ALE to RE Delay tAR 10 - ns CLE to RE Delay tCLR 10 - ns Ready to RE Low tRR 20 - ns RE Pulse Width tRP 12 - ns WE High to Busy tWB - 100 ns Read Cycle Time tRC 25 - ns RE Access Time tREA -20 ns CE Access Time tCEA -25 ns RE High to Output Hi-Z tRHZ - 100 ns CE High to Output Hi-Z tCHZ -30 ns RE High to Output hold tRHOH 15 - ns RE Low to Output hold tRLOH 5- ns CE High to Output hold tCOH 15 - ns RE High Hold Time tREH 10 - ns Output Hi-Z to RE Low tIR 0- ns RE High to WE Low tRHW 100 - ns WE High to RE Low tWHR 60 - ns Device Resetting Time(Read/Program/Erase) tRST - 5/10/500(1) µs |
Similar Part No. - K9K8G08U0M |
|
Similar Description - K9K8G08U0M |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |