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K9S3208V0A-SSB0 Datasheet(PDF) 8 Page - Samsung semiconductor |
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K9S3208V0A-SSB0 Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 26 page K9S3208V0A-SSB0 SmartMediaTM 8 AC Characteristics for Operation NOTE : 1. The time to Ready depends on the value of the pull-up resistor tied R/B pin. 2. To break the sequential read cycle, CE must be held high for longer time than tCEH. Parameter Symbol Min Max Unit Data Transfer from Cell to Register tR - 10 µs ALE to RE Delay(read ID) tAR1 150 - ns ALE to RE Delay(Read cycle) tAR2 50 - ns CE to RE Delay(ID read) tCR 100 - ns Ready to RE Low tRR 20 - ns RE Pulse Width tRP 30 - ns WE High to Busy tWB - 100 ns Read Cycle Time tRC 50 - ns RE Access Time tREA - 35 ns RE High to Output Hi-Z tRHZ 15 30 ns CE High to Output Hi-Z tCHZ - 20 ns RE High Hold Time tREH 15 - ns Output Hi-Z to RE Low tIR 0 - ns Last RE High to Busy(at sequential read) tRB - 100 ns CE High to Ready(in case of interception by CE at read) tCRY - 50 +tr(R/B)(1) ns CE High Hold Time(at the last serial read)(2) tCEH 100 - ns RE Low to Status Output tRSTO - 35 ns CE Low to Status Output tCSTO - 45 ns RE High to WE Low tRHW 0 - ns WE High to RE Low tWHR 60 - ns RE access time(Read ID) tREADID - 35 ns Device Resetting Time(Read/Program/Erase) tRST - 5/10/500 µs AC Timing Characteristics for Command / Address / Data Input Parameter Symbol Min Max Unit CLE Set-up Time tCLS 0 - ns CLE Hold Time tCLH 10 - ns CE Setup Time tCS 0 - ns CE Hold Time tCH 10 - ns WE Pulse Width tWP 25 - ns ALE Setup Time tALS 0 - ns ALE Hold Time tALH 10 - ns Data Setup Time tDS 20 - ns Data Hold Time tDH 10 - ns Write Cycle Time tWC 50 - ns WE High Hold Time tWH 15 - ns |
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